| PART |
Description |
Maker |
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| GT60N322 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT40Q32306 GT40Q323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| IXGH16N170A |
High Voltage IGBT 16 A, 1700 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| MG150J7KS60 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
| IXSX35N120AU1 |
High Voltage IGBT with Diode(VCES200V，VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| GT50J32206 GT50J322 |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
Toshiba Semiconductor
|
| ISL9V5036S3S04 ISL9V5036S3S ISL9V5036P3 ISL9V5036S |
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
360V EcoSPARK 500mJ N-Channel Ignition IGBT
31A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| MBM300GS12AW |
IGBT Module Silicon N-Channel IGBT
|
Hitachi
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
